? 2004 ixys all rights reserved 1 - 2 442 mwi 50-12 e6k ixys reserves the right to change limits, test conditions and dimensions. advanced technical information features ? npt 3 igbts - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits hiperfred tm diode: - fast reverse recovery - low operating forward voltage - low leakage current industry standard package - solderable pins for pcb mounting - isolated copper base plate typical applications ac drives power supplies with power factor correction igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 t c = 25c 51 a i c80 t c = 80c 36 a i cm v ge = 15 v; r g = 39 ? ; t vj = 125c 70 a v cek rbsoa; clamped inductive load; l = 100 h v ces t sc v ce = 900 v; v ge = 15 v; r g = 39 ? ; t vj = 125c 10 s scsoa; non-repetitive p tot t c = 25c 210 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 35 a; v ge = 15 v; t vj = 25c 2.4 2.9 v t vj = 125c 2.8 v v ge(th) i c = 1 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.3 ma t vj = 125c 1.2 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 90 ns t r 50 ns t d(off) 440 ns t f 50 ns e on 5.4 mj e off 2.6 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 2000 pf q gon v ce = 600 v; v ge = 15 v; i c = 35 a 150 nc r thjc (per igbt) 0.6 k/w r thch 0.2 k/w inductive load, t vj = 125c v ce = 600 v; i c = 35 a v ge = 15 v; r g = 39 ? i c25 = 51 a v ces = 1200 v v ce(sat) typ. = 2.4 v igbt module sixpack short circuit soa capability square rbsoa 10, 23 9, 24 14 13 6 5 4 3 22 21 2 1 18 17 15, 16 11, 12 19, 20 8 7 ntc
? 2004 ixys all rights reserved 2 - 2 442 mwi 50-12 e6k ixys reserves the right to change limits, test conditions and dimensions. advanced technical information equivalent circuits for simulation conduction igbt (typ. at v ge = 15 v; t j = 125c) v 0 = 1.0 v; r 0 = 44 m ? free wheeling diode (typ. at t j = 125c) v 0 = 1.5 v; r 0 = 14 m ? thermal response igbt (typ.) c th1 = tbd j/k; r th1 = tbd k/w c th2 = tbd j/k; r th2 = tbd k/w free wheeling diode (typ.) c th1 = tbd j/k; r th1 = tbd k/w c th2 = tbd j/k; r th2 = tbd k/w module symbol conditions maximum ratings t vj operating -40...+125 c t vjm -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ m d mounting torque (m4) 2.0 - 2.2 nm symbol conditions characteristic values min. typ. max. d s creepage distance on surface 12.7 mm d a strike distance in air 12.7 mm weight 40 g diodes symbol conditions maximum ratings i f25 t c = 25c 49 a i f80 t c = 80c 32 a symbol conditions characteristic values min. typ. max. v f i f = 35 a; v ge = 0 v; t vj = 25c 2.6 2.9 v t vj = 125c 1.8 v i rm 35 a t rr 150 ns r thjc (per diode) 0.9 k/w r thch 0.3 k/w i f = 35 a; di f /dt = -600 a/s; t vj = 100c v r = 600 v; v ge = 0 v temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 t = 25c 4.45 4.7 5.0 k ? b 25/85 3510 k dimensions in mm (1 mm = 0.0394")
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